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| SPICE MODELS: MMDT4413 MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * * * Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) K A C2 B1 E1 SOT-363 Dim BC Min 0.10 1.15 2.00 0.30 1.80 -- 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 A B C D F M E2 B2 C1 H 0.65 Nominal Mechanical Data * * * * * * * * Case: SOT-363 Case Material: Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 5 Ordering & Date Code Information: See Page 5 Weight: 0.006 grams (approximate) H J K L M J D F L Note: E1, B1, and C1 = PNP 4403 Section, E2, B2, and C2 = NPN 4401 Section. Type marking indicates orientation C2 B1 E1 All Dimensions in mm * E2 B2 C1 Maximum Ratings, Total Device Characteristic Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range @TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC PNP4403 -40 -40 -5.0 -600 Unit V V V mA NPN4401 60 40 6.0 600 Unit V V V mA Value 200 625 -55 to +150 Unit mW C/W C Maximum Ratings, NPN 4401 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Maximum Ratings, PNP 4403 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Notes: 1. 2. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Maximum combined dissipation. No purposefully added lead. DS30121 Rev. 8 - 2 1 of 5 www.diodes.com MMDT4413 (c) Diodes Incorporated Electrical Characteristics, NPN 4401 Section Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 20 40 80 100 40 0.75 1.0 0.1 40 1.0 250 @TA = 25C unless otherwise specified Max 100 100 300 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 15 20 225 30 Unit V V V nA nA Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 100A, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V B DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) Ccb Ceb hie hre hfe hoe fT td tr ts tf V V pF pF k -4 x 10 S MHz ns ns ns ns IC = 100A, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA B B B B VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Electrical Characteristics, PNP 4403 Section Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 30 60 100 100 20 -0.75 1.5 0.1 60 1.0 200 @TA = 25C unless otherwise specified Max -100 -100 300 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 15 20 225 30 2 of 5 Unit V V V nA nA Test Condition IC = -100A, IE = 0 IC = -1.0mA, IB = 0 IE = -100A, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V B DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 4. VCE(SAT) VBE(SAT) Ccb Ceb hie hre hfe hoe fT td tr ts tf V V pF pF k -4 x 10 S MHz ns ns ns ns IC = -100A, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA B B B B VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA MMDT4413 (c) Diodes Incorporated Short duration pulse test used to minimize self-heating effect. DS30121 Rev. 8 - 2 www.diodes.com DS30121 Rev. 8 - 2 3 of 5 www.diodes.com MMDT4413 (c) Diodes Incorporated 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25C 0.3 0.2 TA = 150C 0.1 TA = -50C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 9 Collector Emitter Saturation Voltage vs. Collector Current (4403) DS30121 Rev. 8 - 2 4 of 5 www.diodes.com MMDT4413 (c) Diodes Incorporated Ordering Information Device MMDT4413-7-F Notes: 5. (Note 5) Packaging SOT-363 Shipping 3000/Tape & Reel For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K13= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Data Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30121 Rev. 8 - 2 5 of 5 www.diodes.com MMDT4413 (c) Diodes Incorporated |
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